DocumentCode :
621257
Title :
Process variation-tolerant 3D microprocessor design: An efficient architectural solution
Author :
Joonho Kong ; Sung Woo Chung
Author_Institution :
Dept. of Electr. & Comput. Eng., Rice Univ., Houston, TX, USA
fYear :
2013
fDate :
29-31 May 2013
Firstpage :
45
Lastpage :
48
Abstract :
Process variation is one of the most challenging problems for 3D microprocessors. This is because stacked dies are likely to have fairly different characteristics due to wafer-to-wafer (W2W) variations, which may severely hurt yield of 3D microprocessors. In this paper, we introduce a process variation-tolerant 3D microprocessor design that exploits an architectural insight: narrow-width values. The main target of our technique is last-level caches (LLCs), which are composed of several dies. By storing only the meaningful bit parts within a data word into the LLCs while discarding the zero bit parts (which can be recovered by the zero-extension logic), our proposed technique improves a storage efficiency of the LLCs, which eventually enhances cache yield. According to our evaluation results, our technique significantly improves cache yield in a performance-/energy-efficient manner.
Keywords :
cache storage; integrated circuit design; integrated circuit yield; microprocessor chips; 3D microprocessor yield; LLC; W2W variations; cache yield; energy efficiency; last-level caches; narrow-width values; performance efficiency; process variation-tolerant 3D microprocessor design; stacked dies; storage efficiency; wafer-to-wafer variations; zero bit parts; zero-extension logic; Arrays; Microprocessors; Process control; Registers; SRAM cells; Terminology; 3D microprocessor; last-level cache; narrowwidth value; process variation; yield;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IC Design & Technology (ICICDT), 2013 International Conference on
Conference_Location :
Pavia
Print_ISBN :
978-1-4673-4740-2
Electronic_ISBN :
978-1-4673-4741-9
Type :
conf
DOI :
10.1109/ICICDT.2013.6563300
Filename :
6563300
Link To Document :
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