Title :
Effective channel length of MOSFET with halo
Author :
Terada, Kenji ; Sanai, Kazuhiko ; Matsuoka, Shingo ; Tsuji, Keita
Author_Institution :
Fac. of Inf. Sci., Hiroshima City Univ., Hiroshima, Japan
Abstract :
The dependences of the effective channel length on the gate voltage for MOSFETs with halo are extracted, and their average behaviors are studied. It is found that they provide the important information about not only the channel structure, but also the effects of the gate voltage and the substrate voltage on the channel, which are helpful for both technology and design engineers to get the common interpretation of “channel length”.
Keywords :
MOSFET; MOSFET; channel length; channel structure; gate voltage; halo; substrate voltage; Current measurement; Logic gates; MOSFET; MOSFET circuits; Resistance; Substrates; Threshold voltage; MOSFET; channel length; channel resistance method; channel structure; halo;
Conference_Titel :
IC Design & Technology (ICICDT), 2013 International Conference on
Conference_Location :
Pavia
Print_ISBN :
978-1-4673-4740-2
Electronic_ISBN :
978-1-4673-4741-9
DOI :
10.1109/ICICDT.2013.6563304
