Title :
Impact of precursors choice on characteristics of PEALD SiN for spacer applications
Author :
Triyoso, D.H. ; Hempel, K. ; Ohsiek, S. ; Shu, Jiangang ; Schaeffer, J.K. ; Lenski, Markus
Author_Institution :
GLOBALFOUNDRIES, Dresden, Germany
Abstract :
As transistor size continues to shrink, the need for conformal spacer which is insensitive to loading condition arises. Previously we have reported improved device characteristics for transistors with PEALD SiN spacer compared to those with CVD SiN spacer. In this work characteristics of PEALD SiN spacer deposited with liquid or gas precursors is studied. Good device properties are obtained with both precursor types, with slightly better iso-loading characteristics for devices with SiN deposited using liquid precursor.
Keywords :
atomic layer deposition; chemical vapour deposition; silicon compounds; transistors; CVD spacer; PEALD spacer; SiN; conformal spacer; device characteristics; device property; gas precursor; iso-loading characteristics; liquid precursor; loading condition; precursors choice; spacer applications; transistors; Films; Loading; Logic gates; Plasma temperature; Resistance; Silicon compounds; Transistors; ALD; SiN; high-k metal gate; iso-dense loading; spacer;
Conference_Titel :
IC Design & Technology (ICICDT), 2013 International Conference on
Conference_Location :
Pavia
Print_ISBN :
978-1-4673-4740-2
Electronic_ISBN :
978-1-4673-4741-9
DOI :
10.1109/ICICDT.2013.6563305
