DocumentCode
621281
Title
A low-power CMOS 0.13 µm Charge-Sensitive Preamplifier for GEM detectors
Author
Pezzotta, A. ; Costantini, A. ; De Matteis, M. ; D´Amico, S. ; Gorini, G. ; Murtas, F. ; Baschirotto, A.
Author_Institution
Dept. of Phys., Univ. of Milano-Bicocca, Milano, Italy
fYear
2013
fDate
29-31 May 2013
Firstpage
147
Lastpage
150
Abstract
In this paper a Charge-Sensitive Preamplifier (CSP) for GEM (Gas Electron Multiplier) detectors readout is presented. The CSP is responsible for signal acquisition and the conversion of the input charge into a voltage signal. The design has been realized in 0.13 μm CMOS technology. It has been demonstrated through a detailed analysis that this is the best CMOS technology to be used in this case, as regards power consumption, intrinsic gain, noise and radiation hardness. The aim is to reduce the power consumption while maintaining other performance at the state-of-the-art. The preamplifier is composed by a three-stage nested Miller Operational Amplifier, with a feed-forward compensation. The system is able to manage a 15 pF detector capacitance. The global power consumption is 1.1 mW and the Equivalent Noise Charge is 418 e-.
Keywords
CMOS integrated circuits; electric sensing devices; electron multipliers; low-power electronics; preamplifiers; GEM detectors; Miller operational amplifier; charge-sensitive preamplifier; equivalent noise charge; gas electron multiplier detectors; low-power CMOS; size 0.13 mum; CMOS integrated circuits; CMOS technology; Capacitance; Detectors; Noise; Power demand; Stability analysis; CMOS; GEM detector; charge-sensitive; front-end; preamplifier; readout; trends;
fLanguage
English
Publisher
ieee
Conference_Titel
IC Design & Technology (ICICDT), 2013 International Conference on
Conference_Location
Pavia
Print_ISBN
978-1-4673-4740-2
Electronic_ISBN
978-1-4673-4741-9
Type
conf
DOI
10.1109/ICICDT.2013.6563324
Filename
6563324
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