Title :
Characterization and modeling of depletion-type nMOS transistors for RF switches with zero power consumption in ON-state
Author :
Andrei, Cristian ; Raoulx, Denis ; Imbert, G. ; Hovens, Bart ; Scarpa, Andrea
Author_Institution :
Design Platforms, NXP Semicond., Caen, France
Abstract :
This paper presents the characterization methodology, RF parameter extractions, and compact modeling of a depletion type- nMOSFET transistor normally “ON” at 0V gate bias. The transistor is used as a RF switch with zero power consumption in on-state and it was fabricated in BiCMOS 0.25μm mature technology from NXP Semiconductors. The test structures of the RF switch are presented and the characteristics in term of small signal equivalent circuit are extracted.
Keywords :
BiCMOS integrated circuits; MOSFET; field effect transistor switches; semiconductor device models; BiCMOS mature technology; NXP Semiconductors; RF parameter extractions; RF switches; compact modeling; depletion-type nMOS transistor characterization; depletion-type nMOS transistor modeling; size 0.25 mum; small-signal equivalent circuit; voltage 0 V; Capacitance; Capacitance measurement; Electrical resistance measurement; Logic gates; Radio frequency; Resistance; Transistors; S-parameters; depletion MOS transistor compact modeling; small signal equivalent circuit;
Conference_Titel :
IC Design & Technology (ICICDT), 2013 International Conference on
Conference_Location :
Pavia
Print_ISBN :
978-1-4673-4740-2
Electronic_ISBN :
978-1-4673-4741-9
DOI :
10.1109/ICICDT.2013.6563332
