DocumentCode :
62141
Title :
Effect of Relief Aperture on Single-Fundamental-Mode Emission of 1.3- 
m GaInNAs GaAs-Based VCSELs
Author :
Sarzala, R.P. ; Czyszanowski, T. ; Nakwaski, Wlodzimierz
Author_Institution :
Photonics Group, Lodz Univ. of Technol., Łódz, Poland
Volume :
50
Issue :
11
fYear :
2014
fDate :
Nov. 2014
Firstpage :
874
Lastpage :
881
Abstract :
This paper investigates methods of suppressing higher order transverse modes in a GaInNAs/GaAs quantum-well GaAs-based vertical-cavity surface-emitting diode laser, with the aid of a 3-D self-consistent model. The inverted surface relief design, which creates the antiphase condition, proved efficient at suppressing higher order transverse modes, in spite of unfavorable thermal effects.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser modes; quantum well lasers; surface emitting lasers; wide band gap semiconductors; 3D self-consistent model; GaInNAs-GaAs; VCSEL; antiphase condition; higher order transverse modes; inverted surface relief design; quantum-well GaAs-based vertical-cavity surface-emitting diode laser; relief aperture; single-fundamental-mode emission; thermal effects; wavelength 1.3 mum; Apertures; Distributed Bragg reflectors; Etching; Gallium arsenide; Optical losses; Stimulated emission; Vertical cavity surface emitting lasers; Semiconductor lasers; numerical simulations; photonic structures; vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2014.2354744
Filename :
6894581
Link To Document :
