A high efficiency SiGe BiCMOS envelope-tracking power amplifier for W-CDMA applications

Author

Yen-Ting Liu ; Ruili Wu ; Lopez, J. ; Yan Li ; Tsay, J. ; Lie, D.Y.C.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA

fYear

2013

fDate

4-5 April 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a highly efficient power amplifier (PA) using the envelope tracking (ET) technique for 3G W-CDMA applications. The PA is designed in the IBM 0.35-μm SiGe BiCMOS process with through-silicon-via (TSV). The CMOS envelope modulator IC is designed and fabricated in the TSMC 0.35-μm SiGe BiCMOS process. The ET-PA system achieves an overall composite power-added-efficiency (PAE) of 35.4% at POUT of 26.5 dBm at 900 MHz with the W-CDMA signal and improves the PAE by 5% compared to that of the fixed-supply standalone SiGe PA.

Keywords

BiCMOS integrated circuits; code division multiple access; modulators; power amplifiers; three-dimensional integrated circuits; 3G W-CDMA applications; BiCMOS; PAE; TSV; envelope tracking power amplifier; modulator IC; power-added-efficiency; through-silicon-via; BiCMOS integrated circuits; CMOS integrated circuits; Multiaccess communication; Power amplifiers; Silicon germanium; Spread spectrum communication; Envelope modulator (EM); W-CDMA; envelope tracking (ET); power amplifier (PA); through-silicon-via (TSV);

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Circuits and Systems (WMCS), 2013 Texas Symposium on

Conference_Location

Waco, TX

Print_ISBN

978-1-4799-0456-3

Type

conf

DOI

10.1109/WMCaS.2013.6563555

Filename

6563555