Title :
Verification of ruggedness and failure in LDMOS under UIS
Author :
Khaund, Chinmoy ; Shreyas, Grama Srinath ; Kumar, M. P. Vijay ; Agarwal, Nishant ; Nidhi, Karuna ; Shao Ming Yang ; Sheu, G.
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
Abstract :
This paper presents the mechanism of unclamped inductive switching (UIS) failure on laterally diffused metaloxide-semiconductor (LDMOS). TCAD Simulations for more than hundred finger devices and analytical solution reveal the criteria for device stability during UIS test. It focuses on the problems that affect the stability and ruggedness of the device and the ways to improve them. This paper takes into account that the device stability depends on the negative value of partial differentiation of diffusion current density with respect to temperature. It is well known fact that variation in drain dose affects the diffusion current in turn varying the stability of the device. Power device ruggedness has been characterized based on the value of lambda (λ) that is proportional to the avalanche current. The improvement methods for the device using design variation are also discussed.
Keywords :
MIS devices; current density; diffusion; failure analysis; power semiconductor devices; semiconductor device testing; technology CAD (electronics); LDMOS failure; LDMOS ruggedness; TCAD simulations; UIS failure; UIS test; avalanche current; device stability; diffusion current density; drain dose affects; laterally diffused metal-oxide-semiconductor; partial differentiation; power device ruggedness; unclamped inductive switching failure; Doping; Failure analysis; Stability analysis; Thermal resistance; Thermal stability; Thumb;
Conference_Titel :
Power Engineering and Optimization Conference (PEOCO), 2013 IEEE 7th International
Conference_Location :
Langkawi
Print_ISBN :
978-1-4673-5072-3
DOI :
10.1109/PEOCO.2013.6564559
