Title :
Evaluation of SiC MOSFET in Buck converter
Author :
Ting Ma ; Haihong Qin ; Bin Zhao ; Xin Nie ; Zhiming Wu
Author_Institution :
Jiangsu Key Lab. of New Energy Generation & Power Conversion, Nanjing Univ. of Aeronaut. & Astronaut., Nanjing, China
Abstract :
SiC device technology has gained much progress. However the advantages of the device level have not been clearly shown in a power conversion circuit. The purpose of this work is to apply the SiC device in a Buck converter and to evaluate the MOSFETs´ driving performance and switching losses for high switching frequency operation. The analysis is verified by the design and test results for a high frequency hard switching silicon carbide based Buck converter.
Keywords :
DC-DC power convertors; MOSFET; power conversion; silicon compounds; switching convertors; wide band gap semiconductors; MOSFET driving performance evaluation; SiC; SiC MOSFET evaluation; SiC device technology; buck converter; high frequency hard switching silicon carbide; high switching frequency operation; power conversion circuit; switching loss evaluation; Logic gates; MOSFET; Optical switches; Resistance; Silicon carbide; Transient analysis; Buck; SiC MOSFET; drive; high frequency;
Conference_Titel :
Industrial Electronics and Applications (ICIEA), 2013 8th IEEE Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-6320-4
DOI :
10.1109/ICIEA.2013.6566551
