Performance of large signal model Heterojunction bipolar transistor InP/InGaAs an optoelectronic mixer

Author

Shaharuddin, N.A. ; Idrus, S.M. ; Isaak, Suhaila

Author_Institution

Fac. of Electr. Eng., Univ. Teknol. Mara (UiTM), Shah Alam, Malaysia

fYear

2013

fDate

19-21 June 2013

Firstpage

1660

Lastpage

1663

Abstract

A large-signal model of InP/InGaAs single HBThas been develop considering spectral performance and mixing. This model is based on Gummel Poon BJT model Heterojunction bipolar transistor (HBT) InP/InGaAs has been modelled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310nm for an up-conversion frequency of 30GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband RoF system to perform photodetection and frequency up-conversion.

Keywords

gallium arsenide; heterojunction bipolar transistors; indium compounds; mixers (circuits); optoelectronic devices; Gummel Poon BJT model heterojunction bipolar transistor; OEM application; frequency 30 GHz; large signal model heterojunction bipolar transistor; optoelectronic mixer; photodetection; single HBT; spectral performance; up-conversion frequency; wavelength 1310 nm; Heterojunction bipolar transistors; Indium gallium arsenide; Integrated circuit modeling; Mixers; Optical fibers; Optical mixing; HBT; gummel poon; large signal; optoelectronic mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics and Applications (ICIEA), 2013 8th IEEE Conference on

Conference_Location

Melbourne, VIC

Print_ISBN

978-1-4673-6320-4

Type

conf

DOI

10.1109/ICIEA.2013.6566635

Filename

6566635