Title :
Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems
Author :
Fleetwood, Zachary E. ; Kenyon, Eleazar W. ; Lourenco, Nelson E. ; Jain, Sonal ; En Xia Zhang ; England, Troy D. ; Cressler, John D. ; Schrimpf, R.D. ; Fleetwood, D.M.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
The total ionizing dose response of both CMOS transistors and SiGe HBTs implemented without utilizing any radiation hardening by design techniques in Jazz Semiconductor´s SBC-18-HXL BiCMOS technology platform is evaluated. The SiGe HBTs remain functional up to the 6 Mrad (SiO2) dose levels needed to support multi-Mrad exploration missions such as NASA´s Europa mission. The CMOS devices are also functional to this extreme total dose. The nFETs exhibit significantly reduced shallow trench isolation leakage compared with nFETs implemented in prior SiGe BiCMOS processes. Both nFETs and pFETs show negligible transconductance and on-current degradation. We conclude that this SiGe process technology is a potential candidate for implementing reliable and survivable multi-Mrad total ionizing dose-hard electronic systems.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; MOSFET; heterojunction bipolar transistors; integrated circuit design; integrated circuit reliability; ionisation; isolation technology; radiation hardening (electronics); semiconductor device reliability; CMOS transistor; HBT; Jazz Semiconductor SBC-18-HXL BiCMOS technology; NASA Europa mission; SiGe; multiMrad exploration mission; multiMrad total ionizing dose-hard electronic system; nFET; on-current degradation; pFET; radiation hardening; shallow trench isolation leakage; transconductance degradation; BiCMOS integrated circuits; CMOS integrated circuits; Degradation; Heterojunction bipolar transistors; Materials reliability; Protons; Silicon germanium; Europa; SiGe HBT; Silicon-Germanium (SiGe); Silicon-Germanium (SiGe) BiCMOS; dose-enhancement; proton irradiation; radiation; saturation; shallow trench isolation (STI); total ionizing dose (TID); turn-around;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2014.2331980
