Investigation of transient photocurrent response of triple pn junction structure

Author

Schidl, Stefan ; Polzer, Andreas ; Dong, Junchen ; Schneider-Hornstein, Kerstin ; Zimmermann, Horst

Author_Institution

Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria

Volume

49

Issue

4

fYear

2013

fDate

Feb. 14 2013

Firstpage

284

Lastpage

285

Abstract

The transient photocurrent response of a vertically stacked triple pn junction structure, which can detect three different colours simultaneously, is investigated. The triple pn junction structure is designed based on the effect that the penetration depth in silicon depends on light wavelength. To increase the bandwidth of optical sensor systems the transient photocurrent response is a critical parameter. The transient response is measured by applying three different light wavelengths to this triple junction structure. This triple pn junction structure is fabricated in a 0.6 μm BiCMOS technology using a p^-p⁺ epitaxial wafer without any process modification. Based on the measurement results, it can be concluded that this triple pn junction structure can be applied to optical sensors without optical filters and the total data rate of this structure can reach up to 100 Mbit/s.

Keywords

BiCMOS integrated circuits; integrated optoelectronics; optical sensors; p-n junctions; photoconductivity; semiconductor epitaxial layers; transient response; BiCMOS technology; light wavelength; optical sensor systems; p^- p⁺ epitaxial wafer; silicon penetration depth; size 0.6 mum; transient photocurrent response; transient response; vertically stacked triple pn junction structure;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2012.4294

Filename

6464689