Impact of Electroforming Current on Self-Compliance Resistive Switching in an ${\rm ITO}/{\rm Gd{:}SiO}_{\rm x}/{\rm TiN}$ Structure

This letter investigates self-compliance behavior for nonvolatile resistance random access memory using the indium tin oxide (ITO)/Gd:SiO_x/TiN structure. Different current compliances in the electroforming process results in different trends in the set process, including a different self-compliance scale and one-or two-step set behaviors. The oxygen ions generated during the electroforming and set process drift to ITO, inducing a semiconductor-like ITO interface formation, which can be regarded as a self-built series resistor.