Title :
A 220dB FOM, 1.9GHz oscillator using a phase noise reduction technique for high-Q oscillators
Author :
Sankaragomathi, K. ; Callaghan, Lori ; Ruby, Rich ; Otis, Brian
Author_Institution :
Univ. of Washington, Seattle, WA, USA
Abstract :
We present a technique to reduce the close-in phase noise of high-Q (FBAR/MEMS/crystal) oscillators. The proposed technique suppresses the up-conversion of 1/f noise via AM-PM conversion by the addition of a non-linear capacitor to the tank. The proposed AM-PM suppression technique has no additional power penalty and incurs a minimal area penalty. Measurements from multiple dies of a 1.9GHZ FBAR oscillator show ≥3.5dB reduction in close-in phase noise using the proposed technique. The FBAR oscillator achieves a measured phase noise of -88dBc/Hz @ 1kHz, -116dBc/Hz @ 10kHz, -146dBc/Hz @ 1MHz offsets. The oscillator with the proposed technique achieves a Figure of Merit (FOM) of 220dB, which is 5.5dB better than the FBAR oscillator with lowest close-in phase noise reported to date [1].
Keywords :
1/f noise; Q-factor; UHF oscillators; bulk acoustic wave devices; capacitors; crystal oscillators; interference suppression; phase noise; 1/f noise; AM-PM conversion; AM-PM suppression technique; FBAR oscillator; FOM; close-in phase noise; figure of merit; frequency 1 MHz; frequency 1 kHz; frequency 1.9 GHz; frequency 10 kHz; high-Q oscillators; nonlinear capacitor; Film bulk acoustic resonators; Micromechanical devices; Noise measurement; Phase measurement; Phase noise; FBAR; MEMS; Oscillators; Phase Noise;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6059-3
DOI :
10.1109/RFIC.2013.6569514