Title :
CMOS RF noise, scaling, and compact modeling for RFIC design
Author :
Antonopoulos, Antonios ; Bucher, Matthias ; Papathanasiou, Kostas ; Makris, Nikos ; Sharma, Ratnesh K. ; Sakalas, Paulius ; Schroter, Michael
Author_Institution :
Dept. of Electron. & Comput. Eng., Tech. Univ. of Crete, Chania, Greece
Abstract :
This work presents an analysis of high frequency noise and linearity performance of a 90 nm CMOS process. Measurements are performed for a wide range of nominal gate lengths and bias points at high frequency. Modeling is based on the EKV3 compact model in Spectre RF circuit simulator from Cadence. The model shows correct scalability for noise and linearity accounting for short channel effects (SCEs), such as velocity saturation (VS) and channel length modulation (CLM). Results are presented versus a common measure of channel inversion level, named inversion coefficient. Optimum performance is shown to gradually shift from higher to lower levels of moderate inversion, when scaling from 240 nm to 100 nm. The same trend is observed from investigating the transconductance frequency product (TFP) of a common-source (CS) LNA for technology nodes ranging from 180 nm to 22 nm.
Keywords :
CMOS integrated circuits; integrated circuit modelling; low noise amplifiers; noise measurement; radiofrequency integrated circuits; CMOS RF noise; Cadence; EKV3 compact model; RFIC design; SCE; Spectre RF circuit simulator; TFP; bias points; channel inversion level; common-source LNA; high frequency noise; inversion coefficient; linearity performance; nominal gate lengths; short channel effects; size 180 nm to 22 nm; size 240 nm to 100 nm; size 90 nm; transconductance frequency product; Integrated circuit modeling; MOSFET; Noise; Radio frequency; Semiconductor device modeling; Compact model; distortion analysis; dynamic range; high frequency noise; metal oxide semiconductor field effect transistor (MOSFET); minimum noise figure (NFmin) moderate inversion;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6059-3
DOI :
10.1109/RFIC.2013.6569520