A highly linear low-noise amplifier using a wideband linearization technique with tunable multiple gated transistors

Author

Jaeyoung Lee ; Jeiyoung Lee ; Bonkee Kim ; Bo-Eun Kim ; Nguyen, Cam

Author_Institution

Dept. of ECE, Texas A&M Univ., College Station, TX, USA

fYear

2013

fDate

2-4 June 2013

Firstpage

181

Lastpage

184

Abstract

A wideband linearization technique using tunable multiple gated transistors (MGTRs) is proposed. Extra tunable input capacitors and the modified derivative superposition (DS) method are also adopted to increase the amplifier´s linearity at RF. A low-noise amplifier (LNA) employing the proposed linearization technique has been developed with 0.18-μm CMOS process for various mobile TV standards in UHF band (470-862 MHz). The LNA achieves 19-dBm IIP₃, 16.5-dB gain, and 1.33-dB NF with 10.8-mW power consumption. Over the desired UHF band, the LNA increases the average IIP₃ obtained with off-state auxiliary transistor by 11.7 dBm.

Keywords

capacitors; linearisation techniques; low noise amplifiers; transistors; CMOS process; LNA; MGTR; UHF band; amplifier linearity; frequency 470 GHz to 862 GHz; gain 16.5 dB; low noise amplifier; mobile TV standards; modified derivative superposition; noise figure 1.33 dB; off state auxiliary transistor; power 10.8 mW; power consumption; size 0.18 mum; tunable input capacitors; tunable multiple gated transistors; wideband linearization technique; Capacitors; Linearity; Linearization techniques; Logic gates; Noise measurement; Transistors; Wideband; Derivative superposition (DS); low-noise amplifier (LNA); mobile TV; multiple gated transistors (MGTRs); nonlinearity; third-order intercept point (IIP3);

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE

Conference_Location

Seattle, WA

ISSN

1529-2517

Print_ISBN

978-1-4673-6059-3

Type

conf

DOI

10.1109/RFIC.2013.6569555

Filename

6569555