Title :
A 100GHz active-varactor VCO and a bi-directionally injection-locked loop in 65nm CMOS
Author :
Shinwon Kang ; Niknejad, Ali M.
Author_Institution :
Berkeley Wireless Res. Center, Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
A 100GHz fundamental active-varactor VCO and a bi-directionally injection-locked loop are demonstrated in 65nm CMOS. Without using a conventional passive varactor, the proposed VCO achieves a tuning range of 5.2% at 100GHz and a phase noise of -112.1dBc/Hz at 10MHz offset. By utilizing the proposed transmission-line-based capacitive coupling, four oscillators are injection-locked properly and the loop creates eight phases of the carrier and 6dB(=10log4) of phase noise improvement, realizing a measured phase noise is -118.8dBc/Hz at 10MHz offset.
Keywords :
CMOS integrated circuits; circuit tuning; field effect MIMIC; injection locked oscillators; millimetre wave oscillators; transmission lines; varactors; voltage-controlled oscillators; CMOS technology; active varactor VCO; bidirectionally injection locked loop; frequency 100 GHz; passive varactor; phase noise; size 65 nm; transmission-line-based capacitive coupling; tuning range; CMOS integrated circuits; Couplings; Frequency measurement; Noise measurement; Phase noise; Voltage-controlled oscillators; 100GHz bi-directionally injection-locked loop; capacitive coupling; injection locking; transformer; transmission line; varactor; voltage-controlled oscillator;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6059-3
DOI :
10.1109/RFIC.2013.6569569
