Title :
A 240 GHz direct conversion IQ receiver in 0.13 μm SiGe BiCMOS technology
Author :
Elkhouly, Mohamed ; Yanfie Mao ; Glisic, Savo ; Meliani, Chafik ; Ellinger, F. ; Scheytt, J. Christoph
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology with fT/fmax of 300/500 GHz is presented. The receiver consists of a four stage LNA, an active power divider, an LO IQ generation network, and direct down-conversion fundamental mixers. The integrated IQ receiver yields a conversion gain of 18 dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245 GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5 V supply and 20 mA from 2 V.
Keywords :
BiCMOS analogue integrated circuits; submillimetre wave integrated circuits; submillimetre wave receivers; BiCMOS Technology; DSB NF; LO IQ generation network; LO power; SiGe; active power divider; bandwidth 25 GHz; current 135 mA; current 20 mA; direct conversion IQ receiver; direct down-conversion fundamental mixers; four stage LNA; frequency 240 GHz; frequency 245 GHz; frequency 300 GHz; frequency 500 GHz; gain 18 dB; integrated IQ receiver; noise figure 18 dB; size 0.13 mum; voltage 2 V; voltage 3.5 V; Gain; Gain measurement; Impedance matching; Mixers; Radio frequency; Receivers; Silicon germanium; 240 GHz; Direct-Conversion; IQ Receiver; Sub-THz;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6059-3
DOI :
10.1109/RFIC.2013.6569589
