Title :
A Ka-Band doherty power amplifier with 25.1 dBm output power, 38% peak PAE and 27% back-off PAE
Author :
Curtis, Jeffery ; Pham, Anh-Vu ; Chirala, Mohan ; Aryanfar, Farshid ; Zhouyue Pi
Author_Institution :
Davis Millimeter-wave Res. Center, Davis, CA, USA
Abstract :
We present the design and development of the first fully integrated, two stage Doherty power amplifier (DPA) in the Ka-Band. The DPA is fabricated in a 0.15-μm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. At 26.4 GHz, the amplifier achieves measured small signal gain of 10.3 dB, output power at 1-dB compression point (P1dB) of 25.1 dBm, peak power added efficiency (PAE) of 38%, and PAE of 27% at 6 dB back-off power. To the best of the author´s knowledge, this Doherty circuit is the first fully integrated millimeter-wave amplifier that achieves the highest power and a recorded 27% PAE at 6-dB back-off and each unit amplifier has 2 stages.
Keywords :
high electron mobility transistors; millimetre wave power amplifiers; DPA; Doherty circuit; Doherty power amplifier; Ka band; PAE; back off power; frequency 26.4 GHz; gain 10.3 dB; millimeter wave amplifier; pHEMT process; peak power added efficiency; pseudomorphic high electron mobility transistor; signal gain; Computer architecture; Gallium arsenide; Microprocessors; Millimeter wave communication; Power amplifiers; Power generation; Power measurement; Gallium arsenide; MIMICs; Millimeter wave devices; Millimeter wave integrated circuits; Power amplifiers;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6059-3
DOI :
10.1109/RFIC.2013.6569601
