Title :
A 163–180 GHz 2×2 amplifier-doubler array with peak EIRP of +5 dBm
Author :
Golcuk, Faith ; Edwards, Jennifer M. ; Cetinoneri, B. ; Atesal, Y.A. ; Rebeiz, Gabriel M.
Author_Institution :
Univ. of California, San Diego, La Jolla, CA, USA
Abstract :
This paper presents a 2×2 amplifier-multiplier array with on-chip antennas at 163-180 GHz in 45 nm CMOS SOI technology. The measured EIRP is > 2 dBm at 165-175 GHz with a peak value of 5 dBm at 170 GHz meeting the stringiest metal-density rules for antennas. The amplifiermultiplier architecture is scalable to N×M arrays for high EIRP and transmit power.
Keywords :
CMOS analogue integrated circuits; field effect MIMIC; millimetre wave amplifiers; millimetre wave antenna arrays; silicon-on-insulator; CMOS SOI technology; amplifier-doubler array; frequency 163 GHz to 180 GHz; on-chip antennas; peak EIRP; size 45 nm; stringiest metal-density rules; Antenna arrays; Antenna measurements; Arrays; CMOS integrated circuits; Metals; Slot antennas; CMOS doubler; THz sources; frequency multiplier; mm-wave; on-chip antenna;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4673-6059-3
DOI :
10.1109/RFIC.2013.6569605
