A 130nm SiGe BiCMOS technology for mm-Wave applications featuring HBT with fT/fMAX of 260/320 GHz

Author

Candra, P. ; Jain, Vinesh ; Peng Cheng ; Pekarik, Jack ; Camillo-Castillo, Renata ; Gray, P. ; Kessler, T. ; Gambino, J. ; Dunn, James ; Harame, D.

Author_Institution

IBM, Research Triangle Park, NC, USA

fYear

2013

fDate

2-4 June 2013

Firstpage

381

Lastpage

384

Abstract

A manufacturable 130nm SiGe BiCMOS RF technology for high-performance mm-wave analog applications having a high-speed SiGe Heterojunction Bipolar Transistor (HBT) integrated into a full-featured RFCMOS is presented. The technology features a high performance (HP) SiGe HBT with f_T/f_MAX of 260/320 GHz, a high breakdown (HB) HBT with BV_CEO of 3.5V, 130nm RF CMOS, and a full suite of passive devices. Specific device results pertaining to this BiCMOS8XP technology are discussed in this paper.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; radiofrequency integrated circuits; BVCEO; RFCMOS; SiGe; SiGe BiCMOS RF technology; frequency 260 GHz; frequency 320 GHz; heterojunction bipolar transistor; high-speed SiGe HBT; mm-wave analog application; passive device; size 130 nm; voltage 3.5 V; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Heterojunction bipolar transistors; Performance evaluation; Radio frequency; Silicon germanium; 130nm; BiCMOS; HBT; SiGe; mm-wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE

Conference_Location

Seattle, WA

ISSN

1529-2517

Print_ISBN

978-1-4673-6059-3

Type

conf

DOI

10.1109/RFIC.2013.6569610

Filename

6569610