DocumentCode :
625470
Title :
A 130nm SiGe BiCMOS technology for mm-Wave applications featuring HBT with fT/fMAX of 260/320 GHz
Author :
Candra, P. ; Jain, Vinesh ; Peng Cheng ; Pekarik, Jack ; Camillo-Castillo, Renata ; Gray, P. ; Kessler, T. ; Gambino, J. ; Dunn, James ; Harame, D.
Author_Institution :
IBM, Research Triangle Park, NC, USA
fYear :
2013
fDate :
2-4 June 2013
Firstpage :
381
Lastpage :
384
Abstract :
A manufacturable 130nm SiGe BiCMOS RF technology for high-performance mm-wave analog applications having a high-speed SiGe Heterojunction Bipolar Transistor (HBT) integrated into a full-featured RFCMOS is presented. The technology features a high performance (HP) SiGe HBT with fT/fMAX of 260/320 GHz, a high breakdown (HB) HBT with BVCEO of 3.5V, 130nm RF CMOS, and a full suite of passive devices. Specific device results pertaining to this BiCMOS8XP technology are discussed in this paper.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; radiofrequency integrated circuits; BVCEO; RFCMOS; SiGe; SiGe BiCMOS RF technology; frequency 260 GHz; frequency 320 GHz; heterojunction bipolar transistor; high-speed SiGe HBT; mm-wave analog application; passive device; size 130 nm; voltage 3.5 V; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Heterojunction bipolar transistors; Performance evaluation; Radio frequency; Silicon germanium; 130nm; BiCMOS; HBT; SiGe; mm-wave;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
ISSN :
1529-2517
Print_ISBN :
978-1-4673-6059-3
Type :
conf
DOI :
10.1109/RFIC.2013.6569610
Filename :
6569610
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=625470
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