DocumentCode :
625472
Title :
Nano switching crossbar array ESD protection structures
Author :
Wang, Xiongfei ; Shi, Zhiyan ; Liu, Jiangchuan ; Wang, Lingfeng ; Ma, Ronghua ; Zhao, Hang ; Dong, Zhaoyang ; Zhang, Chenghui ; Wang, Aiping
Author_Institution :
Univ. of California, Riverside, Riverside, CA, USA
fYear :
2013
fDate :
2-4 June 2013
Firstpage :
389
Lastpage :
392
Abstract :
We report a new nano-switching ESD protection mechanism and dual-polarity Cu/SixOyNz/W nano crossbar array ESD structures. Experiments show full ESD protection featuring fast response of 100pS, ultra low leakage of <;2pA and ESD protection of >9A. New dispersed local ESD tunneling model and CMOS integration are reported.
Keywords :
CMOS integrated circuits; copper; electrostatic discharge; silicon compounds; tungsten; CMOS integration; Cu-SixOyNz-W; ESD protection structure; dispersed local ESD tunneling model; dual-polarity nanocrossbar array ESD structure; nanoswitching crossbar array; Arrays; Electrostatic discharges; Nanoscale devices; Periodic structures; Silicon; Switches; Tunneling; ESD protection; nano switching array;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE
Conference_Location :
Seattle, WA
ISSN :
1529-2517
Print_ISBN :
978-1-4673-6059-3
Type :
conf
DOI :
10.1109/RFIC.2013.6569612
Filename :
6569612
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=625472
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