V-band dual-conversion down-converter with low-doped N-well Schottky diode in 0.18 μm CMOS process

Author

Yu-Chih Hsiao ; Chinchun Meng ; Hung-Ju Wei ; Ta-Wei Wang ; Guo-Wei Huang ; Chang, Mau-Chung Frank

Author_Institution

Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2013

fDate

2-4 June 2013

Firstpage

415

Lastpage

418

Abstract

In this paper, a V-band dual-conversion down-converter with a silicon-based Schottky diode using low-doped N-well for DC and RF characteristics optimization is demonstrated in standard 0.18 μm CMOS technology. A triple-balanced subharmonic Schottky diode microwave mixer and a double-balanced resistive analog mixer are employed as the first conversion mixer and the second conversion mixer, respectively. As a result, the conversion gain is about -1 dB in the range of 45~64 GHz. The noise figure is about 20 dB, IP1dB is about -5 dBm and IIP3 is about 5 dBm. The total power consumption is 92.4 mW at 2.5 V supply voltage.

Keywords

CMOS integrated circuits; Schottky diodes; microwave mixers; silicon; CMOS process; DC characteristics; RF characteristics; V-band dual-conversion down-converter; double-balanced resistive analog mixer; first conversion mixer; low-doped n-well Schottky diode; microwave mixer; power 92.4 mW; second conversion mixer; size 0.18 mum; voltage 2.5 V; CMOS integrated circuits; CMOS process; Doping; Gain; Mixers; Noise figure; Schottky diodes; Schottky diode; down-converter; dual-conversion; subharmonic mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE

Conference_Location

Seattle, WA

ISSN

1529-2517

Print_ISBN

978-1-4673-6059-3

Type

conf

DOI

10.1109/RFIC.2013.6569619

Filename

6569619