Title :
High-Power Tunable Dilute Mode DFB Laser With Low RIN and Narrow Linewidth
Author :
Faugeron, Michael ; Tran, M. ; Parillaud, O. ; Chtioui, Mourad ; Robert, Yannick ; Vinet, Eric ; Enard, A. ; Jacquet, Joel ; van Dijk, Frederic
Author_Institution :
Thales Air Syst., Limours, France
Abstract :
We have developed a 1-mm-long high-power DFB laser using an asymmetrical cladding based on the dilute waveguide technique. We have obtained about 180 mW output power at 25°C and >;30 mW at 15°C-85°C chip temperature with >;55-dB sidemode suppression ratio. This temperature range allows a 9.7-nm wavelength tunability. For high output power, the relative intensity noise is lower than -160 dB/Hz in the 0.08-40-GHz frequency range and the optical linewidth is better than 300 kHz.
Keywords :
III-V semiconductors; claddings; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser noise; laser tuning; optical waveguides; semiconductor lasers; InGaAsP-InP; asymmetrical cladding; dilute waveguide technique; frequency 0.08 GHz to 40 GHz; high power tunable dilute mode DFB laser; low relative intensity noise laser; narrow linewidth laser; sidemode suppression ratio; size 1 mm; temperature 15 C to 85 C; Distributed feedback devices; Indium phosphide; Optical fibers; Power lasers; Temperature measurement; Waveguide lasers; 15 $mu{rm m}$ distributed feedback lasers; high-power diode lasers; low relative intensity noise (RIN); narrow linewidth;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2225419
