Title :
Growth of graphite film on copper foil by plasma enhanced chemical vapor depositon
Author :
Chenyan Shi ; Zhiwei Zhao ; Ning Zhao ; Wei Lei
Author_Institution :
Display R&D Center, Southeast Univ., Nanjing, China
Abstract :
The growth of graphite film on copper foil by plasma enhanced chemical vapor deposition was achieved at the temperature as relatively low as 800□. The obtained sample was characterized by SEM and Raman spectra. The results show that the transparent continuous graphite film can be obtained by PECVD.
Keywords :
Raman spectra; copper; graphite; plasma CVD; scanning electron microscopy; semiconductor growth; Raman spectra; SEM; copper foil; graphite film growth; plasma enhanced chemical vapor depositon; temperature; Copper; Films; Graphene; Plasma temperature; Scanning electron microscopy; PECVD; copper foil; graphite film;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2013 IEEE 14th International
Conference_Location :
Paris
Print_ISBN :
978-1-4673-5976-4
DOI :
10.1109/IVEC.2013.6570918
