DocumentCode
626107
Title
Performance degradation simulation for M-type cathode based on ion bombardment
Author
Xiaolian Shi ; Hehong Fan ; Fangfang Song ; Xingqun Zhao ; Suiren Wan ; Xiaohan Sun
Author_Institution
Res. Center for Electron. Device & Syst. Reliability, Southeast Univ., Nanjing, China
fYear
2013
fDate
21-23 May 2013
Firstpage
1
Lastpage
2
Abstract
Simulation of M-type cathode performance degradation is studied based on ion bombardment with interdiffusion effect considered. Sputtered volume, sputter distribution and ion spot occurrence time can be estimated, with estimated sputtered volume close to former researches. For M-type Re-coated cathode with 300nm-thick film, ion spots were estimated to appear after 2.06×105 h´s working.
Keywords
cathodes; chemical interdiffusion; sputter deposition; M-type recoated cathode; interdiffusion effect; ion bombardment; ion spot occurrence time estimation; performance degradation simulation; size 300 nm; sputter distribution estimation; sputtered volume estimation; thick film; Atomic measurements; Cathodes; Coatings; Degradation; Films; Solid modeling; Trajectory; M-type cathode; degradation model; ion bombardment; ion spot; sputter;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Electronics Conference (IVEC), 2013 IEEE 14th International
Conference_Location
Paris
Print_ISBN
978-1-4673-5976-4
Type
conf
DOI
10.1109/IVEC.2013.6571103
Filename
6571103
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