Title :
A Novel 6.72GHz Low Phase Noise Voltage-Controlled Oscillator Adopting Metal-Oxide-Metal Capacitors Using 130nm CMOS Technology
Author :
Aqeeli, Mohammed ; Zhirun Hu ; Muvianto, Cahyo
Author_Institution :
Microwave & Commun. Syst. Group, Univ. of Manchester, Manchester, UK
Abstract :
This paper presents a novel Figure of Merit (FOM), low-phase-noise, LC-tank voltage-controlled oscillator (VCO). The work presents a fully integrated 6.72GHz VCO designed and simulated using 130-nm CMOS technology. Instead of using the conventional diode-based varactor in the tank design, a high-performance metal-oxide-metal (MOM) capacitor is employed as an effective varactor. The proposed VCO-measured results demonstrate a worst case phase noise of - 124.13dBc/Hz at 1MHz frequency, offset from a 6.72GHz carrier. An optimization technique is used to design an excellent FOM, which is -193.02dBc/Hz under a power consumption of 2.3mW. The VCO shows a tuning range of approximately 14%. To the best of our knowledge, this VCO presents the highest FOM level and the lowest phase noise compared to prior state-of-the-art solutions for the same frequency range.
Keywords :
MIM devices; MMIC oscillators; capacitors; field effect MMIC; phase noise; varactors; voltage-controlled oscillators; CMOS technology; FOM; LC-tank VCO; LC-tank voltage-controlled oscillator; diode-based varactor; figure of merit; frequency 1 MHz; frequency 6.72 GHz; high-performance MOM capacitor; high-performance metal-oxide-metal capacitor; low phase noise voltage-controlled oscillator; power 2.3 mW; size 130 nm; CMOS integrated circuits; Capacitors; Inductors; Method of moments; Phase noise; Voltage-controlled oscillators; (MOM) capacitor; CMOS processes; design method; figure of merit; low phase noise;
Conference_Titel :
Computational Intelligence, Communication Systems and Networks (CICSyN), 2013 Fifth International Conference on
Conference_Location :
Madrid
Print_ISBN :
978-1-4799-0587-4
DOI :
10.1109/CICSYN.2013.46