DocumentCode
62647
Title
Engineering Interband Tunneling in Nanowires With Diamond Cubic or Zincblende Crystalline Structure Based on Atomistic Modeling
Author
DAmico, Pino ; Marconcini, Paolo ; Fiori, G. ; Iannaccone, Giuseppe
Author_Institution
Dipt. di Ing. dell´Inf., Univ. di Pisa, Via Caruso, Italy
Volume
12
Issue
5
fYear
2013
fDate
Sept. 2013
Firstpage
839
Lastpage
842
Abstract
We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure. Results are obtained from quantum transport simulations based on Nonequilibrium Green´s functions with a tight-binding atomistic Hamiltonian. Interband tunneling is extremely sensitive to the longitudinal electric field, to the nanowire cross section, through the gap, and to the material. We have derived an approximate analytical expression for the transmission probability based on the Wentzel-Kramers-Brillouin theory and on a proper choice of the effective interband tunneling mass, which shows good agreement with results from atomistic quantum simulation.
Keywords
Green´s function methods; WKB calculations; crystal structure; diamond; nanowires; tight-binding calculations; tunnelling; C; Wentzel-Kramers-Brillouin theory; atomistic modeling; band-to-band tunneling; device parameter; diamond cubic structure; interband tunneling mass; longitudinal electric field; nanowire cross section; nonequilibrium Green functions; quantum transport; tight-binding atomistic Hamiltonian; transmission probability; zincblende crystalline structure; Approximation methods; Effective mass; Nanowires; Silicon; Transistors; Tunneling; Band-to-band; computational electronics; nanoelectronics; tunnel FET;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2013.2275167
Filename
6571273
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