DocumentCode :
62647
Title :
Engineering Interband Tunneling in Nanowires With Diamond Cubic or Zincblende Crystalline Structure Based on Atomistic Modeling
Author :
DAmico, Pino ; Marconcini, Paolo ; Fiori, G. ; Iannaccone, Giuseppe
Author_Institution :
Dipt. di Ing. dell´Inf., Univ. di Pisa, Via Caruso, Italy
Volume :
12
Issue :
5
fYear :
2013
fDate :
Sept. 2013
Firstpage :
839
Lastpage :
842
Abstract :
We present an investigation in the device parameter space of band-to-band tunneling in nanowires with a diamond cubic or zincblende crystalline structure. Results are obtained from quantum transport simulations based on Nonequilibrium Green´s functions with a tight-binding atomistic Hamiltonian. Interband tunneling is extremely sensitive to the longitudinal electric field, to the nanowire cross section, through the gap, and to the material. We have derived an approximate analytical expression for the transmission probability based on the Wentzel-Kramers-Brillouin theory and on a proper choice of the effective interband tunneling mass, which shows good agreement with results from atomistic quantum simulation.
Keywords :
Green´s function methods; WKB calculations; crystal structure; diamond; nanowires; tight-binding calculations; tunnelling; C; Wentzel-Kramers-Brillouin theory; atomistic modeling; band-to-band tunneling; device parameter; diamond cubic structure; interband tunneling mass; longitudinal electric field; nanowire cross section; nonequilibrium Green functions; quantum transport; tight-binding atomistic Hamiltonian; transmission probability; zincblende crystalline structure; Approximation methods; Effective mass; Nanowires; Silicon; Transistors; Tunneling; Band-to-band; computational electronics; nanoelectronics; tunnel FET;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2013.2275167
Filename :
6571273
Link To Document :
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