Title :
A comparative study of STT-MTJ based non-volatile flip-flops
Author :
Taehui Na ; Kyungho Ryu ; Jisu Kim ; Kang, S.H. ; Seong-Ook Jung
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
In this paper, we categorize STT-MTJ based non-volatile flip-flops (NV-FF) into two basic structures: merged latch and sensing circuit (MLS) structure and separated latch and sensing circuit (SLS) structure. We also analyze the two structures with various types of sensing and write circuits. HSPICE simulation results using the industry-compatible 45-nm model parameter shows the SLS structure has better performance according to D-Q delay, PDP, and sensing current than the MLS structure because the SLS structure can optimize the FF operation and the sensing operation independently. Among various types of sensing circuit, the cross coupled inverter based sensing circuit including two MTJs and the single ended sensing circuit including two MTJs show better performances on low sensing current and high yield.
Keywords :
flip-flops; logic gates; D-Q delay; HSPICE simulation; MLS structure; PDP; SLS structure; STT-MTJ-based NV-FF; STT-MTJ-based nonvolatile flip-flops; cross-coupled inverter-based sensing circuit; industry-compatible model parameter; merged latch-sensing circuit structure; sensing current; sensing-write circuits; separated latch-sensing circuit structure; single-ended sensing circuit; size 45 nm; Delays; Flip-flops; Latches; Magnetic tunneling; Nonvolatile memory; Sensors; Transistors;
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-5760-9
DOI :
10.1109/ISCAS.2013.6571794
