DocumentCode :
626495
Title :
PSpice switch-based versatile memristor model
Author :
Ascoli, A. ; Tetzlaff, Ronald ; Corinto, Fernando ; Gilli, Manfred
Author_Institution :
Fac. of Electr. & Comput. Eng., Tech. Univ. Dresden, Dresden, Germany
fYear :
2013
fDate :
19-23 May 2013
Firstpage :
205
Lastpage :
208
Abstract :
This paper proposes a simple PSpice implementation of the boundary condition model for memristor nano-structures. The boundary condition model is equivalent to the linear drift model except for the introduction of adaptable boundary conditions, which impose an activation threshold of the state dynamics at the boundaries, i.e. once the state gets clipped at one of the boundaries, it may not be released from it unless the input reverses its sign and gets larger than a certain activation threshold in magnitude. Thanks to the adaptability of the boundary behavior, the boundary condition model is able to describe a variety of physical nano-scale systems, where mem-ristor dynamics arise from distinct physical mechanisms. The proposed PSpice emulator may be used for the investigation of potential applications of memristive systems in integrated circuit design, especially for the development of non-volatile memories and neuromorphic platforms. The accuracy of the PSpice circuit model is validated through comparison with experimental results relative to the Hewlett-Packard memristor.
Keywords :
SPICE; memristors; nanoelectronics; random-access storage; semiconductor device models; Hewlett-Packard memristor; PSPICE emulator; PSPICE switch-based versatile memristor model; activation threshold; boundary condition model; distinct physical mechanisms; integrated circuit; linear drift model; memristor nanostructures; neuromorphic platforms; nonvolatile memories development; physical nanoscale systems; Adaptation models; Boundary conditions; Computational modeling; Integrated circuit modeling; Mathematical model; Memristors; SPICE;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
ISSN :
0271-4302
Print_ISBN :
978-1-4673-5760-9
Type :
conf
DOI :
10.1109/ISCAS.2013.6571818
Filename :
6571818
Link To Document :
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