Composite memristance of parallel and serial memristor circuits

Author

Budhathoki, Ram Kaji ; Sah, Maheshwar Pd. ; Adhikari, Shyam Prasad ; Hyongsuk Kim

Author_Institution

Dept. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea

fYear

2013

fDate

19-23 May 2013

Firstpage

209

Lastpage

212

Abstract

When multiple memristors are connected to each other, the composite behavior of the devices becomes complicated and is difficult to predict, due to the polarity dependent nonlinear variation in the memristance of individual memristor. In this paper, we investigate the relationships among flux, charge and memristance of diverse composite memristors, using the HP TiO₂ model, and analyze the characteristics of complex memristor circuits. It is assumed that all memristor circuits operate at a stable composite memristance state, in which the composite flux curve does not vary and the memristor circuits act as a single memristive system, regardless of input current or voltage. Such study will be conducted for serial and parallel memristor circuits.

Keywords

memristors; composite memristance; diverse composite memristor charge; diverse composite memristor flux; parallel memristor circuit; polarity-dependent nonlinear variation; serial memristor circuit; single-memristive system; Electrodes; Integrated circuit modeling; Magnetic hysteresis; Memristors; Resistance; Titanium; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2013 IEEE International Symposium on

Conference_Location

Beijing

ISSN

0271-4302

Print_ISBN

978-1-4673-5760-9

Type

conf

DOI

10.1109/ISCAS.2013.6571819

Filename

6571819