DocumentCode :
626596
Title :
A 281-nW 43.3 fJ/conversion-step 8-ENOB 25-kS/s asynchronous SAR ADC in 65nm CMOS for biomedical applications
Author :
Chao Yuan ; Lam, Yvonne Y. H.
Author_Institution :
IC Design Centre of Excellence, Nanyang Technol. Univ., Singapore, Singapore
fYear :
2013
fDate :
19-23 May 2013
Firstpage :
622
Lastpage :
625
Abstract :
This paper describes a low-power 25-kS/s successive approximation register (SAR) analog-to-digital converter (ADC) for biomedical applications. The ADC employs a novel low-energy and area-efficient tri-level switching scheme in the DAC. Compared to the conventional SAR ADC, the average switching energy and total capacitance are reduced by 97% and 75%, respectively. Asynchronous design is implemented to eliminate the conventional system clock which is N-time of sampling rate. Furthermore, a delay-based internal clock generator produces a high-speed signal which allows True Single Phase Clock (TSPC) D Flip-flop (DFF) to be used in the low-speed biomedical applications. The ADC can work between 0 to 1 MS/s. The prototype ADC fabricated in UMC 65 nm 1P6M CMOS achieves best performance at 25 kS/s with 50.1 dB SNDR and 55.3 dB SFDR. Operating at 1 V supply and 25 kS/s, the ADC consumes 281 nW and exhibits a FOM of 43.3 fJ/conversion-step. The chip die area is 145 μm × 120 μm.
Keywords :
CMOS integrated circuits; analogue-digital conversion; asynchronous circuits; biomedical electronics; flip-flops; low-power electronics; CMOS integrated circuit; D flip-flop; analog-digital converter; asynchronous SAR ADC; asynchronous design; delay based internal clock generator; high speed signal; low speed biomedical application; power 281 nW; size 120 mum; size 145 mum; size 65 nm; successive approximation register; trilevel switching; true single phase clock; voltage 1 V; Arrays; Capacitors; Clocks; Generators; Logic gates; Registers; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
ISSN :
0271-4302
Print_ISBN :
978-1-4673-5760-9
Type :
conf
DOI :
10.1109/ISCAS.2013.6571919
Filename :
6571919
Link To Document :
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