DocumentCode :
626618
Title :
High-side NMOS power switch and bootstrap driver for high-frequency fully-integrated converters with enhanced efficiency
Author :
Cheng Huang ; Lin Cheng ; Mok, Philip K. T. ; Wing-Hung Ki
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear :
2013
fDate :
19-23 May 2013
Firstpage :
693
Lastpage :
696
Abstract :
This paper proposes a High-Side (HS) NMOS power switch and bootstrap driver with DCM charging phase extension for high-frequency fully-integrated converters with 1.2V supply voltage. The conventional bootstrap diode is replaced by a self-synchronized switch and the efficiency loss and operation failure at DCM is prevented by an extra charging phase. Simulation at 100MHz with UMC 0.13μm process shows that the optimum efficiency is driven 2% higher with significant power loss reduction by the proposed design compared to a conventional converter under similar operation conditions. 20% power stage area is saved by the dual NMOS structure compared to the conventional converter with PMOS and NMOS switches.
Keywords :
MOS integrated circuits; driver circuits; power convertors; semiconductor diodes; switches; DCM charging phase extension; UMC process; bootstrap diode; bootstrap driver; enhanced efficiency; extra charging phase; fully integrated converter; high-frequency converter; high-side NMOS power switch; self-synchronized switch; size 0.13 mum; voltage 1.2 V; Capacitance; Capacitors; Inductors; MOS devices; Switches; Switching loss; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
ISSN :
0271-4302
Print_ISBN :
978-1-4673-5760-9
Type :
conf
DOI :
10.1109/ISCAS.2013.6571941
Filename :
6571941
Link To Document :
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