Title :
A compact analog active time delay line using SiGe BiCMOS technology
Author :
Hamouda, Mahmoud ; Fischer, Georg ; Weigel, Robert ; Ussmueller, T.
Author_Institution :
Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
Abstract :
This work discusses the design of a 60ps delay element for UWB analog signals ranging from 0.05 up to 8GHz. The design is implemented using active architecture design which have the advantage of being very compact in area compared to the passive architectures. The proposed architecture is flexible and can be cascaded to have a delay of up to 200ps with a maximum insertion loss of 3dB. The circuit is designed using a low cost 0.25μm 95GHz fmax SiGe-HBT-BiCMOS process technology consuming a power of 121mW. The estimated consumed area of the circuit is 0.49mm2.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; delay lines; heterojunction bipolar transistors; semiconductor materials; ultra wideband technology; UWB analog signals; active architecture design; circuit design; compact analog active time delay line; frequency 0.05 GHz to 8 GHz; insertion loss; loss 3 dB; passive architecture; power 121 mW; silicon germanium HBT BiCMOS process technology; size 0.25 mum; time 60 ps; Computer architecture; Delay lines; Delays; Insertion loss; Microprocessors; RLC circuits; Synchronization;
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-5760-9
DOI :
10.1109/ISCAS.2013.6572031