Title :
Inductorless, powerl-proportional, optical receiver front-end in TSMC 90 nm
Author :
Dash, Pranjna Parimita ; Cowan, Glenn ; Liboiron-Ladouceur, O.
Author_Institution :
Electr. & Comput. Eng., Concordia Univ., Montreal, QC, Canada
Abstract :
This work presents the design and performance of an inductorless, power proportional tunable optical receiver front-end in TSMC 90nm CMOS technology. The proposed optical receiver front-end includes a transimpedance amplifier (TIA) and a post amplifier. The TIA uses the shunt feedback topology with a current controlling a MOSFET array, and the post amplifier uses a common source topology loaded with active inductors. The receiver front-end has the ability to tune from 1.25 Gb/s data rate to 15 Gb/s with proportional power dissipation and a constant gain of 84 dBΩ. The overall power dissipation varies from 0.94 mW to 7.46 mW as the data rate scales maintaining power dissipation below 800 fJ/bit at all data rates. The variable 3 dB bandwidth is from 886.1 MHz to 10.83 GHz with an input referred noise density from 4.307 pA/sqrt(Hz) to 14.27 pA/sqrt(Hz).
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; circuit tuning; feedback amplifiers; integrated circuit design; integrated circuit noise; integrated optoelectronics; microwave integrated circuits; microwave power amplifiers; operational amplifiers; optical receivers; power MOSFET; power integrated circuits; MOSFET array; TIA; TSMC CMOS technology; bandwidth 886.1 MHz to 10.83 MHz; bit rate 1.25 Gbit/s to 15 Gbit/s; circuit tuning; common source topology; current control; gain 3 dB; inductorless power-proportional tunable optical receiver front-end; input referred noise density; post amplifier; power 0.94 mW to 7.46 mW; power dissipation; shunt feedback topology; size 90 nm; transimpedance amplifier; Active inductors; Bandwidth; MOSFET; Noise; Optical receivers; Power dissipation;
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-5760-9
DOI :
10.1109/ISCAS.2013.6572049