Analysis and design of high speed/high linearity continuous time delta-sigma modulator

Author

Chao Chu ; Bruckner, Thomas ; Kauffman, John G. ; Anders, Jens ; Becker, Jurgen ; Ortmanns, Maurits

Author_Institution

Inst. of Microelectron., Univ. of Ulm, Ulm, Germany

fYear

2013

fDate

19-23 May 2013

Firstpage

1268

Lastpage

1271

Abstract

This paper considers the implementation of a continuous-time low-pass single-bit ΔΣ analog-digital converter (ADC) for radar applications. By taking advantage of the high transit frequency of a 0.25μm SiGe BiCMOS technology, the 3rd-order modulator operates at 1.92GHz and achieves 77.8dB SNDR within a bandwidth of 15MHz, when simulating the sensitive circuit parts on transistor level. Thanks to the inherent linearity of single-bit digital-analog converter (DAC), high linearity of 90dB spurious-free dynamic range (SFDR) can be achieved.

Keywords

BiCMOS digital integrated circuits; Ge-Si alloys; UHF integrated circuits; analogue-digital conversion; delta-sigma modulation; 3rd-order modulator; ADC; BiCMOS technology; SFDR; SNDR; SiGe; bandwidth 15 MHz; continuous-time low-pass single-bit ΔΣ analog-digital converter; frequency 1.92 GHz; high speed-high linearity continuous time delta-sigma modulator; single-bit DAC; single-bit digital-analog converter; size 0.25 mum; spurious-free dynamic range; transistor level; Bandwidth; Frequency modulation; Linearity; Noise; Quantization (signal); Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2013 IEEE International Symposium on

Conference_Location

Beijing

ISSN

0271-4302

Print_ISBN

978-1-4673-5760-9

Type

conf

DOI

10.1109/ISCAS.2013.6572084

Filename

6572084