Title :
Analysis and design of high speed/high linearity continuous time delta-sigma modulator
Author :
Chao Chu ; Bruckner, Thomas ; Kauffman, John G. ; Anders, Jens ; Becker, Jurgen ; Ortmanns, Maurits
Author_Institution :
Inst. of Microelectron., Univ. of Ulm, Ulm, Germany
Abstract :
This paper considers the implementation of a continuous-time low-pass single-bit ΔΣ analog-digital converter (ADC) for radar applications. By taking advantage of the high transit frequency of a 0.25μm SiGe BiCMOS technology, the 3rd-order modulator operates at 1.92GHz and achieves 77.8dB SNDR within a bandwidth of 15MHz, when simulating the sensitive circuit parts on transistor level. Thanks to the inherent linearity of single-bit digital-analog converter (DAC), high linearity of 90dB spurious-free dynamic range (SFDR) can be achieved.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; UHF integrated circuits; analogue-digital conversion; delta-sigma modulation; 3rd-order modulator; ADC; BiCMOS technology; SFDR; SNDR; SiGe; bandwidth 15 MHz; continuous-time low-pass single-bit ΔΣ analog-digital converter; frequency 1.92 GHz; high speed-high linearity continuous time delta-sigma modulator; single-bit DAC; single-bit digital-analog converter; size 0.25 mum; spurious-free dynamic range; transistor level; Bandwidth; Frequency modulation; Linearity; Noise; Quantization (signal); Silicon germanium;
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-5760-9
DOI :
10.1109/ISCAS.2013.6572084
