Title :
Improved technique for continuous tuning of CMOS transconductor
Author :
Algueta, Jose M. ; Lopez-Martin, Antonio J. ; Ramirez-Angulo, Jaime ; Carvajal, R.G.
Author_Institution :
Dept. Electr. & Electron. Eng., Public Univ. of Navarra, Pamplona, Spain
Abstract :
A technique based on the use of Floating Gate MOS (FGMOS) transistors is proposed to improve the continuous tuning of CMOS transconductors. It can be applied to tuning circuits based on resistive current division, and allows significantly improving the linearity and input and output range the transconductor. Measurement results of a test chip prototype show an increase in IM3 of 13 dB for two input tones of 1Vpp, 950 kHz and 1050 kHz.
Keywords :
CMOS analogue integrated circuits; MOSFET; circuit tuning; operational amplifiers; CMOS transconductor; FGMOS transistors; continuous tuning; floating gate MOS transistors; frequency 1050 kHz; frequency 950 kHz; linearity improvement; resistive current division; tuning circuits; voltage 1 V; Band-pass filters; CMOS integrated circuits; Linearity; Resistance; Resistors; Transistors; Tuning;
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-5760-9
DOI :
10.1109/ISCAS.2013.6572089
