DocumentCode
626764
Title
Improved technique for continuous tuning of CMOS transconductor
Author
Algueta, Jose M. ; Lopez-Martin, Antonio J. ; Ramirez-Angulo, Jaime ; Carvajal, R.G.
Author_Institution
Dept. Electr. & Electron. Eng., Public Univ. of Navarra, Pamplona, Spain
fYear
2013
fDate
19-23 May 2013
Firstpage
1288
Lastpage
1291
Abstract
A technique based on the use of Floating Gate MOS (FGMOS) transistors is proposed to improve the continuous tuning of CMOS transconductors. It can be applied to tuning circuits based on resistive current division, and allows significantly improving the linearity and input and output range the transconductor. Measurement results of a test chip prototype show an increase in IM3 of 13 dB for two input tones of 1Vpp, 950 kHz and 1050 kHz.
Keywords
CMOS analogue integrated circuits; MOSFET; circuit tuning; operational amplifiers; CMOS transconductor; FGMOS transistors; continuous tuning; floating gate MOS transistors; frequency 1050 kHz; frequency 950 kHz; linearity improvement; resistive current division; tuning circuits; voltage 1 V; Band-pass filters; CMOS integrated circuits; Linearity; Resistance; Resistors; Transistors; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location
Beijing
ISSN
0271-4302
Print_ISBN
978-1-4673-5760-9
Type
conf
DOI
10.1109/ISCAS.2013.6572089
Filename
6572089
Link To Document