Title :
A low-noise amplifier with continuously-tuned input matching frequency and output resonance frequency
Author :
Xi Zhu ; Chirn Chye Boon ; Iji, Ayobami ; Yichuang Sun ; Heimlich, Michael
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This paper outlines the popular circuit tuning strategies reported for the implementation of reconfigurable low-noise amplifiers (LNAs). It presents a continuously-tuned LNA intended for multi-standard applications as well as enhancing the yield of conventional narrowband LNAs. The presented LNA is designed and implemented in a 0.25μm silicon-on-sapphire (SOS) CMOS process. It uses MOS-varactors at the output to continuously tune its load resonance frequency and input matching frequency without the need of a tunable input network, achieving optimized power consumption and noise figure (NF). The post-layout simulations show that the designed LNA can be continuously tuned from 2.6 GHz to 3.5 GHz. Over this frequency range, an input IP3 of of -12 dB, gain of 17 dB and a NF of less than 2 dB have been achieved with 3.4 mW of power consumption at 1.8V.
Keywords :
CMOS integrated circuits; low noise amplifiers; power consumption; reconfigurable architectures; resonance; sapphire; silicon-on-insulator; tuning; varactors; LNA; MOS-varactors; SOS CMOS process; Si-Al2O3; circuit tuning strategies; continuously-tuned input matching frequency; frequency 2.6 GHz to 3.5 GHz; input IP3; load resonance frequency; multistandard applications; narrowband LNA; noise figure; output resonance frequency; power consumption; reconfigurable low-noise amplifiers; silicon-on-sapphire CMOS process; size 0.25 mum; tunable input network; voltage 1.8 V; CMOS integrated circuits; Gain; Impedance matching; Noise measurement; Resonant frequency; Tuning; Wideband;
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-5760-9
DOI :
10.1109/ISCAS.2013.6572225