• DocumentCode
    626940
  • Title

    A 0.5-V 250-nW 65-dB SNDR passive ΔΣ modulator for medical implant devices

  • Author

    Yeknami, Ali Fazli ; Alvandpour, Atila

  • Author_Institution
    Dept. of Electr. Eng., Linkoping Univ., Linköping, Sweden
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    2010
  • Lastpage
    2013
  • Abstract
    A 0.5-V ultra-low-power second-order DT ΔΣ modulator is presented in this paper for medical implant devices. The modulator employs 2nd-order passive low-pass filter and ultra-low-voltage building blocks, including preamplifier, regenerative comparator, and clock controller, in order to enable operation near 0.5 V supply. A low-noise and gain-enhanced single-stage preamplifier is developed using a body-driven technique. Passive filter is gain boosted by power-efficient charge-redistribution amplification scheme. Designed in a 65nm CMOS technology, the modulator achieves 65 dB peak SNDR over a 500 Hz signal bandwidth, while it consumes 250 nW from a 0.5 V supply. The modulator is functional at 0.45V and obtains 52 dB SNR, while consuming 200 nW.
  • Keywords
    CMOS integrated circuits; clocks; comparators (circuits); delta-sigma modulation; integrated circuit design; integrated circuit noise; low-pass filters; low-power electronics; passive filters; preamplifiers; prosthetic power supplies; radiofrequency integrated circuits; 2nd-order passive low-pass filter; CMOS technology; SNDR; body-driven technique; clock controller; low-noise gain-enhanced single-stage preamplifier; medical implant device; noise figure 52 dB; noise figure 65 dB; power 200 nW; power 250 nW; power-efficient charge-redistribution amplification scheme; regenerative comparator; size 65 nm; ultralow-power second-order DT passive ΔΣ modulator; ultralow-voltage building block; voltage 0.45 V; voltage 0.5 V; Capacitors; Clocks; Gain; Modulation; Noise; Passive filters; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
  • Conference_Location
    Beijing
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-5760-9
  • Type

    conf

  • DOI
    10.1109/ISCAS.2013.6572265
  • Filename
    6572265