• DocumentCode
    626945
  • Title

    A 0.5V rate-resolution scalable SAR ADC with 63.7dB SFDR

  • Author

    Hai Huang ; Kun Ao ; Zhiyong Guo ; Qiang Li

  • Author_Institution
    Centre for Commun. Circuits & Syst., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    2030
  • Lastpage
    2033
  • Abstract
    A 0.5V 6-to-10b rate-resolution scalable SAR ADC with microwatt power consumption is presented. Employing the successive approximation register (SAR) architecture, the proposed ADC exhibits the sampling rates of 125kS/s, 150kS/s and 250kS/s at scalable resolutions of 10b, 8b and 6b, respectively. A low-leakage voltage boosting technique is proposed, which reduces the leakage of MOS switches by 99% as compared to conventional techniques. This has ensured the ADC operating at sampling rates from 175kS/s to 5kS/s with only 0.2b ENOB degradation. Meanwhile, the effect of bridge capacitor on the linearity of merged capacitor switching (MCS) DAC is discussed. Demonstrated in a 0.13μm CMOS process, measured results show the ADC achieves ENOB of 8.51b, 7.42b, and 5.97b at 10b, 8b, and 6b modes, respectively. At 10b 125kS/s, the entire ADC consumes only 3.4μW from a 0.5V supply.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; approximation theory; bridge circuits; capacitor switching; integrated circuit measurement; low-power electronics; switches; CMOS process; ENOB degradation; MCS; MOS switch leakage; SFDR; bridge capacitor effect; low-leakage voltage boosting technique; merged capacitor switching; microwatt power consumption; noise figure 63.7 dB; power 3.4 muW; rate-resolution scalable SAR ADC; size 0.13 mum; storage capacity 0.2 bit; storage capacity 5.97 bit; storage capacity 6 bit to 10 bit; successive approximation register; voltage 0.5 V; Arrays; Boosting; Bridge circuits; Capacitance; Capacitors; Clocks; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
  • Conference_Location
    Beijing
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-5760-9
  • Type

    conf

  • DOI
    10.1109/ISCAS.2013.6572270
  • Filename
    6572270