• DocumentCode
    626958
  • Title

    A high-speed 2×VDD output buffer with PVT detection using 40-nm CMOS technology

  • Author

    Chua-Chin Wang ; Wen-Je Lu ; Hsin-Yuan Tseng

  • Author_Institution
    Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    2079
  • Lastpage
    2082
  • Abstract
    A high-speed compensation technique is proposed to automatically adjust the slew rate of a 2×VDD output buffer. Based on the detected PVT (Process, Voltage, Temperature) corner, the output buffer will turn on different current paths correspondingly to either increase or decrease the output driving current such that the slew rate of the output can be adjusted as well. The proposed design is implemented using a typical 40 nm CMOS process to justify the slew rate compensation performance. By on-silicon measurements, the data rate is 500/460 MHz given 0.9/1.8 V supply voltage with a 20 pF load, the maximum slew rate is 0.53 (V/ns), and the core area of the proposed design is 0.052 × 0.254 mm2.
  • Keywords
    CMOS integrated circuits; buffer circuits; compensation; detector circuits; electric sensing devices; elemental semiconductors; integrated circuit design; integrated circuit measurement; silicon; CMOS technology; PVT detection; Si; capacitance 20 pF; frequency 460 MHz; frequency 500 MHz; high-speed 2xVDD output buffer; high-speed compensation technique; output driving current; process-voltage-σtemperature detection; size 40 nm; slew rate adjustment; slew rate compensation performance; voltage 0.9 V; voltage 1.8 V; CMOS integrated circuits; CMOS process; MOS devices; Temperature sensors; Threshold voltage; Voltage measurement; I/O buffer; PVT variation; floating N-well circuit; gateoxide reliability; mixed-voltage tolerant; slew rate compensation; threshold voltage detection;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
  • Conference_Location
    Beijing
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-5760-9
  • Type

    conf

  • DOI
    10.1109/ISCAS.2013.6572283
  • Filename
    6572283