Title :
A high gain ultra-wideband low noise amplifier with 802.11a interference rejection
Author :
Ro-Min Weng ; Yi-Han Wu ; Huo-Ying Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan
Abstract :
A high gain ultra-wideband (UWB) low noise amplifier (LNA) with notch filter for 5.8 GHz interference rejection is presented in this paper. For extending the bandwidth with a considerably gain flatness, the UWB LNA uses the stagger tuning technique of two stages with different resonant frequencies. The notch filter with extremely high quality factor provides high rejection ratio to eliminate the in-band interference from nearby wireless local area network systems. The proposed circuit was simulated with TSMC 0.18 μm 1P6M CMOS process technology with 1.8 V power supply. The maximum power gain is 15.43 dB. The minimum noise figure is 4.36 dB with full bandwidth of 3.1-10.6 GHz. The input reflection coefficient S11 and the output reflection coefficient S22 are both less than -10dB. The maximum interference rejection ratio (IRR) is over 44.7 dB at 5.83 GHz of interference. The chip size including I/O pads for further measurement is 0.877×0.985mm2.
Keywords :
CMOS integrated circuits; low noise amplifiers; microwave amplifiers; notch filters; radiofrequency interference; tuning; ultra wideband technology; wireless LAN; 802.11a interference rejection; IRR; TSMC 1P6M CMOS process technology; UWB LNA; bandwidth 3.1 GHz to 10.6 GHz; frequency 5.8 GHz; high gain ultra-wideband low noise amplifier; in-band interference; interference rejection ratio; noise figure; notch filter; reflection coefficient; size 0.18 mum; stagger tuning technique; voltage 1.8 V; wireless local area network; Gain; Inductors; Interference; Low-noise amplifiers; Q-factor; Resonant frequency; Ultra wideband technology; Ultra-wideband; high-gain; interference rejection; low noise amplifier; notch filter;
Conference_Titel :
Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
Conference_Location :
Beijing
Print_ISBN :
978-1-4673-5760-9
DOI :
10.1109/ISCAS.2013.6572356