• DocumentCode
    627025
  • Title

    A digitally-calibrated 10GS/s reconfigurable flash ADC in 65-nm CMOS

  • Author

    Yousry, Ramy ; Park, Heejung ; E-Hung Chen ; Yang, Chih-Kong Ken

  • Author_Institution
    Univ. of California, Los Angeles, Los Angeles, CA, USA
  • fYear
    2013
  • fDate
    19-23 May 2013
  • Firstpage
    2443
  • Lastpage
    2447
  • Abstract
    The design of a high-speed reconfigurable analog-to-digital converter in 65-nm CMOS is described. Accuracy requirements are met without compromising the high-speed performance by using trimming-based offset cancellation. The ADC can be configured to work as a 3-bit, a 4-bit, or a 5-bit ADC with maximum integral nonlinearity (INL) and differential nonlinearity (DNL) of 0.48LSB and 0.35LSB respectively. The ADC achieves a figure-of-merit of 0.46pJ/conv-step and the active area is 0.13 mm2.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; CMOS; DNL; INL; differential nonlinearity; digitally-calibrated reconfigurable flash ADC; high-speed reconfigurable analog-to-digital converter; maximum integral nonlinearity; size 65 nm; trimming-based offset cancellation; word length 3 bit; word length 4 bit; Accuracy; CMOS integrated circuits; Calibration; Clocks; Receivers; Resistors; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2013 IEEE International Symposium on
  • Conference_Location
    Beijing
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-5760-9
  • Type

    conf

  • DOI
    10.1109/ISCAS.2013.6572373
  • Filename
    6572373