DocumentCode
6271
Title
Bifacial Structures of ZnS Humidity Sensor and Cd-Free CIGS Photovoltaic Cell as a Self-Powered Device
Author
Han-Ting Hsueh ; Yu-Jen Hsiao ; Yu-De Lin ; Chung-Lin Wu
Author_Institution
Nat. Appl. Res. Labs., Tainan, Taiwan
Volume
35
Issue
12
fYear
2014
fDate
Dec. 2014
Firstpage
1272
Lastpage
1274
Abstract
In this letter, a ZnS humidity sensor was integrated with MgF2/ZnS/CuIn1-xGaxSe2 (CIGS)/Mo photovoltaic cell as a self-powered device. Both the ZnS layers of this bifacial device were deposited at the same time by a one-step process. This ZnS layer not only serves as the buffer layer of the CIGS photovoltaic cell on the upside, but is also used as the humidity sensing material on the backside. Under 1-sun illumination, the humidity current increased monotonically from 0.045 to 12.63 nA as we increased the related humidity (RH) from 30% to 95%. At RH 95%, the humidity current decreased from 13.1 to 4.93 nA while the illumination decreased from 1 to 0.1 sun. These results indicate that this device is of practical use as a self-powered humidity sensor.
Keywords
II-VI semiconductors; copper compounds; humidity sensors; indium compounds; magnesium compounds; molybdenum; photovoltaic cells; solar cells; zinc compounds; MgF2-ZnS-CuIn1-xGaxSe2-Mo; ZnS; bifacial structures; cadmiun-free CIGS photovoltaic cell; humidity current; humidity sensing material; self powered device; self-powered device; self-powered humidity sensor; Current measurement; Electrical resistance measurement; Humidity; Photovoltaic cells; Resistance; Thin films; Zinc compounds; CIGS photovoltaic cell; ZnS; ZnS.; relative humidity;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2361648
Filename
6932445
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