• DocumentCode
    6271
  • Title

    Bifacial Structures of ZnS Humidity Sensor and Cd-Free CIGS Photovoltaic Cell as a Self-Powered Device

  • Author

    Han-Ting Hsueh ; Yu-Jen Hsiao ; Yu-De Lin ; Chung-Lin Wu

  • Author_Institution
    Nat. Appl. Res. Labs., Tainan, Taiwan
  • Volume
    35
  • Issue
    12
  • fYear
    2014
  • fDate
    Dec. 2014
  • Firstpage
    1272
  • Lastpage
    1274
  • Abstract
    In this letter, a ZnS humidity sensor was integrated with MgF2/ZnS/CuIn1-xGaxSe2 (CIGS)/Mo photovoltaic cell as a self-powered device. Both the ZnS layers of this bifacial device were deposited at the same time by a one-step process. This ZnS layer not only serves as the buffer layer of the CIGS photovoltaic cell on the upside, but is also used as the humidity sensing material on the backside. Under 1-sun illumination, the humidity current increased monotonically from 0.045 to 12.63 nA as we increased the related humidity (RH) from 30% to 95%. At RH 95%, the humidity current decreased from 13.1 to 4.93 nA while the illumination decreased from 1 to 0.1 sun. These results indicate that this device is of practical use as a self-powered humidity sensor.
  • Keywords
    II-VI semiconductors; copper compounds; humidity sensors; indium compounds; magnesium compounds; molybdenum; photovoltaic cells; solar cells; zinc compounds; MgF2-ZnS-CuIn1-xGaxSe2-Mo; ZnS; bifacial structures; cadmiun-free CIGS photovoltaic cell; humidity current; humidity sensing material; self powered device; self-powered device; self-powered humidity sensor; Current measurement; Electrical resistance measurement; Humidity; Photovoltaic cells; Resistance; Thin films; Zinc compounds; CIGS photovoltaic cell; ZnS; ZnS.; relative humidity;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2014.2361648
  • Filename
    6932445