Title :
Study of threshold voltage of p-channel four gate transistor
Author :
Noor, Samantha Lubaba ; Haq, A. F. M. Saniul ; Hassan, Mehdi
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
A three dimensional model of SOI p-channel four gate transistor has been developed using device simulator Silvaco/ATLAS. Threshold voltage for the device is studied for different biasing condition at the four gates and different physical parameter like channel length. The results are compared to the results obtained from the analytical model of threshold voltage of n-channel four gate transistor to find out whether the analytical model works for p-channel G4-FET also.
Keywords :
MOSFET; silicon-on-insulator; SOI p-channel four gate transistor three dimensional model; Silvaco-ATLAS device simulator; n-channel gate transistor threshold voltage; p-channel G4-FET; p-channel four gate transistor threshold voltage; Analytical models; Electric potential; Junctions; Logic gates; Numerical models; Threshold voltage; Transistors; Four Gate Transistor; Fully Depleted; SOI; Threshold voltage;
Conference_Titel :
Informatics, Electronics & Vision (ICIEV), 2013 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-0397-9
DOI :
10.1109/ICIEV.2013.6572568
