Title :
Class-F power amplifier with 80.1% maximum PAE at 2 GHz for cellular base-station applications
Author :
Taesong Hwang ; Jenshan Lin ; Azadet, Kamran ; Wilson, Ross S. ; Kiss, P. ; Abdelli, Said ; Laturell, Donald
Author_Institution :
Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
A GaN HEMT class-F power amplifier (PA) achieving a high maximum power added efficiency (PAE) is presented. The class-F PA exhibits maximum PAE of 80.1 % with an output power of 40.7 dBm at 2 GHz. The PA maintains PAE higher than 50% at 6-dB input back off. The PA shows PAE higher than 70% over 200-MHz frequency range from 1.9 GHz to 2.1 GHz. Source-pull and load-pull techniques in largesignal analysis were conducted to achieve optimum impedance terminations at fundamental and harmonics.
Keywords :
cellular radio; high electron mobility transistors; power amplifiers; GaN; HEMT class-F power amplifier; cellular base-station applications; class-F PA; class-F power amplifier; frequency 1.9 GHz to 2.1 GHz; frequency 200 MHz; large-signal analysis; load-pull techniques; maximum PAE; maximum power added efficiency; optimum impedance terminations; source-pull techniques; Area measurement; Gallium nitride; HEMTs; Impedance matching; Large scale integration; Radio frequency; Silicon; HEMT; PAE; class-F PA; gallium nitride (GaN);
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2013 IEEE 14th Annual
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4673-5536-0
Electronic_ISBN :
978-1-4673-5535-3
DOI :
10.1109/WAMICON.2013.6572736
