DocumentCode :
627791
Title :
Optimized integrated micro-hotplates in CMOS technology
Author :
Siegele, M. ; Gamauf, C. ; Nemecek, A. ; Mutinati, Giorgio C. ; Steinhauer, Stephan ; Kock, Alexander ; Kraft, J. ; Siezert, Jorg ; Schrank, Franz
Author_Institution :
FOTEC Forschungs- und Technologietransfer GmbH, Wiener Neustadt, Austria
fYear :
2013
fDate :
16-19 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
Within this work the development of integrated Micro-HotPlates (μHPs) for gas sensing applications as a System-On Chip (SOC) is presented. As gas sensors exploit resistance variations of sensing materials like SnO2 at high operating temperatures, integrated μHPs are required for the dynamic and low power operation of these sensors. The optimized μHP structures consist of fully released membranes with polysilicon heaters in the oxide stack and suspension arms to the bulk silicon. Thanks to the optimized μHP design very low power consumption of Pel ~20mW at high temperatures up to T=400°C together with a thermal uniformity of only ΔT~1K across the active area ending up in the highest reported efficiency of =26-20K/mW for standard CMOS hotplates is achieved. Further a rise/fall time trise/tfall =4.5/5.4ms was measured. Long term stability of the μHP has been proven applying ten million measurement cycles. Thermography confirmed the temperature distribution and functionality. The realized hotplates cover a heating area of AμHP=100×100μm2/70×70μm2 at arm lengths of larm=70μm/50μm respectively. The chips have been realized in 0.35μm standard CMOS technology and released in a post process MEMS-etching step.
Keywords :
CMOS integrated circuits; electric heating; gas sensors; infrared imaging; membranes; system-on-chip; temperature distribution; tin compounds; CMOS hotplate; MEMS-etching step; SOC; SnO2; bulk silicon; gas sensing application; integrated microhotplate; membrane; oxide stack; polysilicon heater; power consumption; size 0.35 mum; suspension arm; system-on chip; temperature 400 C; temperature distribution; thermography; time 4.5 ms; time 5.4 ms; CMOS integrated circuits; Gas detectors; Heating; Power demand; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2013 IEEE 11th International
Conference_Location :
Paris
Print_ISBN :
978-1-4799-0618-5
Type :
conf
DOI :
10.1109/NEWCAS.2013.6573624
Filename :
6573624
Link To Document :
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