DocumentCode :
627797
Title :
A dual-level and dual-band class-D CMOS power amplifier for iot applications
Author :
Jianhui Cui ; Ke Zhang ; Tong Tian
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
fYear :
2013
fDate :
16-19 June 2013
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, a dual-level and dual-band Class-D CMOS power amplifier (PA) in a standard 0.18μm CMOS process is presented for Internet of Things (IoT) applications. With a tunable power amplifier stages controlled by a single bit switch, the proposed PA enables the dual-level operation, low and high output power modes. At the high level mode, all the stages are turned on, and at the low level output power mode, the stages are scaled while only part amplifiers work in order to maintain the PAE performance over a wide range of output power levels. Exploiting a tunable band matching network, the PA can also provide dual-band operation. Experimental results indicate that the proposed amplifier provides greater than 20dB gain, 16-19dBm output power at the 600/780MHz bands. The measured maximum efficiencies of the dual-band PA are 36.6% and 46.66% for the low output power mode and high output power mode, respectively.
Keywords :
CMOS analogue integrated circuits; Internet; Internet of Things; UHF integrated circuits; UHF power amplifiers; Internet of Things; IoT application; PAE performance; dual-band PA; dual-level dual-band Class-D CMOS PA; dual-level dual-band class-D CMOS power amplifier; efficiency 36.6 percent; efficiency 46.66 percent; frequency 600 MHz; frequency 780 MHz; gain 20 dB; high-level mode; high-output power mode; low-output power mode; single-bit switch; standard CMOS process; tunable band matching network; tunable power amplifier stages; Dual band; Gain; Impedance matching; Power amplifiers; Power generation; Switches; CMOS; Class-D; Dual-Level; Dual-band; Matching network; RF power amplifiers (PA);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2013 IEEE 11th International
Conference_Location :
Paris
Print_ISBN :
978-1-4799-0618-5
Type :
conf
DOI :
10.1109/NEWCAS.2013.6573630
Filename :
6573630
Link To Document :
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