DocumentCode :
627843
Title :
Evaluation of hybrid MRAM/CMOS cells for reconfigurable computing
Author :
Torres, L. ; Brum, Raphael M. ; Guillemenet, Y. ; Sassatelli, Gilles ; Cargnini, Luis Vitorio
Author_Institution :
LIRMM, Univ. Montpellier 2, Montpellier, France
fYear :
2013
fDate :
16-19 June 2013
Firstpage :
1
Lastpage :
6
Abstract :
The main objective of this paper is to give an overview of different hybrid MRAM/CMOS cells to use in the context of reconfigurable computing. The way to convert magnetic information into an electrical one is not unique and we propose to compare different kind of hybrid cells. These hybrid cells can be used to define structures as Look-up Table, configuration memory point, Flip-flop and other basic elements needed to define programmable logic. Even if these cells were designed for the TAS (Thermally Assisted Switching) MRAM technology, it is possible to adapt them to more advanced technologies such as STT (Spin Transfer Torque).
Keywords :
CMOS integrated circuits; MRAM devices; flip-flops; programmable logic devices; reconfigurable architectures; STT; TAS; configuration memory point; flip-flop; hybrid MRAM-CMOS cell; look-up table; programmable logic; reconfigurable computing; spin transfer torque; thermally assisted switching; CMOS integrated circuits; Inverters; Magnetic tunneling; Noise; Nonvolatile memory; Random access memory; Transistors; Hybrid MRAM/CMOS cells; Reconfigurable Computing; TAS MRAM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2013 IEEE 11th International
Conference_Location :
Paris
Print_ISBN :
978-1-4799-0618-5
Type :
conf
DOI :
10.1109/NEWCAS.2013.6573676
Filename :
6573676
Link To Document :
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