DocumentCode
628351
Title
Thermo mechanical challenges for processing and packaging stacked ultrathin wafers
Author
Gonzalez, M. ; Vandevelde, B. ; La Manna, A. ; Swinnen, B. ; Beyne, Eric
Author_Institution
Imec, Leuven, Belgium
fYear
2013
fDate
28-31 May 2013
Firstpage
7
Lastpage
12
Abstract
During the manufacturing of 3D stacked-die packaging structures, different operations such as micro bumps formation, underfilling, flip chip and overmold curing will introduce residual stresses, which will interact with subsequent service loads applied to the package and may also influence the growth of cracks in critical locations. In this work, the packaging of a 3D-RAM mounted on a logic die is simulated taking the thermal history into account by simulating the main process steps and by adapting the mechanical stiffness of the materials. The resulting stress/strain tensors are taken as initial condition of the following step and the mechanical properties of the new materials added to the process are adapted. The resulting stresses and strains at every step are extracted from the model to identify the most critical processing steps. A die to wafer approach is used for the stacking process as it allows the integration of heterogeneous and different die size. In this work we show the simulation results after each processing step for two die stacking approaches: (a) mold wafer reconstruction, (b) window wafer reconstruction. In the first case, high warpage is observed. In the second case, warpage is reduced but high stress concentration is observed in the logic die.
Keywords
curing; flip-chip devices; internal stresses; moulding; random-access storage; tensors; thermomechanical treatment; 3D stacked-die packaging structures; 3D-RAM; die stacking; flip chip; logic die; mechanical stiffness; micro bumps formation; mold wafer reconstruction; overmold curing; residual stresses; stacked ultrathin wafers; stress-strain tensors; thermal history; thermomechanical challenges; window wafer reconstruction; Packaging; Random access memory; Semiconductor device modeling; Silicon; Stacking; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC), 2013 IEEE 63rd
Conference_Location
Las Vegas, NV
ISSN
0569-5503
Print_ISBN
978-1-4799-0233-0
Type
conf
DOI
10.1109/ECTC.2013.6575543
Filename
6575543
Link To Document